System and method for providing a low voltage bandgap reference circuit

ABSTRACT

A system and method are disclosed for providing a low voltage bandgap reference circuit that provides a substantially constant output voltage over a range of values of temperature. For example, the bandgap reference circuit could be capable of providing output voltages that are as low as one hundred millivolts. Also, no special start-up circuitry may be required to initiate the operation of the bandgap reference circuit. The bandgap reference circuit could further require fewer transistors and fewer resistors than prior art bandgap reference circuits.

TECHNICAL FIELD OF THE INVENTION

The present invention is generally directed to the manufacture of bandgap reference circuits and, in particular, to a system and method for providing an improved low voltage bandgap reference circuit.

BACKGROUND OF THE INVENTION

A bandgap reference circuit is commonly used to provide a reference voltage in electronic circuits. A reference voltage must provide the same voltage every time the electronic circuit is powered up. In addition, the reference voltage must remain constant and independent of variations in temperature, fabrication process, and supply voltage.

A bandgap reference circuit relies on the predictable variation with temperature of the bandgap energy of an underlying semiconductor material (usually silicon). The energy bandgap of silicon is on the order of one and two tenths volt (1.2 V). Some types of prior art bandgap reference circuits use the bandgap energy of silicon in bipolar junction transistors to compensate for temperature effects.

As the design dimensions of electronic circuit elements decrease, the magnitude of the power supply voltages have also decreased. Lower power supply voltages reduce the total power requirements of an electronic circuit. This is especially important in electronic circuits that operate on battery power. Electronic circuits that use lower supply voltages also require bandgap reference circuits that provide lower reference voltages.

Therefore, there is a need in the art for a bandgap reference circuit that is capable of providing a low reference voltage. Specifically, there is a need in the art for an improved low voltage bandgap reference circuit that can provide a reference voltage having a magnitude less than one and two tenths volts (1.2 V).

Before undertaking the Detailed Description of the Invention below, it may be advantageous to set forth definitions of certain words and phrases used throughout this patent document: the terms “include” and “comprise,” as well as derivatives thereof, mean inclusion without limitation; the term “or,” is inclusive, meaning and/or; the phrases “associated with” and “associated therewith,” as well as derivatives thereof, may mean to include, be included within, interconnect with, contain, be contained within, connect to or with, couple to or with, be communicable with, cooperate with, interleave, juxtapose, be proximate to, be bound to or with, have, have a property of, or the like.

Definitions for certain words and phrases are provided throughout this patent document, those of ordinary skill in the art should understand that in many, if not most instances, such definitions apply to prior uses, as well as to future uses, of such defined words and phrases.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, in which like reference numerals represent like parts:

FIG. 1 illustrates a schematic representation of a first embodiment of a low voltage bandgap reference circuit of the present invention; and

FIG. 2 illustrates a schematic representation of a second embodiment of a low voltage bandgap reference circuit of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1 and 2, discussed below, and the various embodiments used to describe the principles of the present invention in this patent document are by way of illustration only and should not be construed in any way to limit the scope of the invention. Those skilled in the art will understand that the principles of the present invention may be implemented with any type of suitably arranged bandgap reference circuit.

FIG. 1 illustrates a schematic representation of a first embodiment of a low voltage bandgap reference circuit 100 constructed in accordance with the principles of the present invention. The input voltage V_(IN) is connected to a first current source 110 that produces a current having a value of I₁ and to a second current source 120 that also produces a current having a value of I₁. As shown in FIG. 1, the input voltage V_(IN) is also connected to the collector of bipolar junction transistor Q₃ and to the collector of bipolar junction transistor Q₄.

The output of first current source 110 is connected to the collector of bipolar junction transistor Q₁. The output of first current source 110 is also connected to the base of bipolar junction transistor Q₄. The output of second current source 120 is connected to the collector of bipolar junction transistor Q₂. The output of second current source 120 is also connected to the base of bipolar junction transistor Q₃. The emitter of bipolar junction transistor Q₃ is connected to the base of bipolar junction transistor Q₂. The emitter of bipolar junction transistor Q₃ is also connected through resistor R₂ to the base of bipolar junction transistor Q₁.

The emitter of bipolar junction transistor Q₁ is connected to ground. A first end of resistor R₁ is connected to the base of bipolar junction transistor Q₁ and a second end of resistor R₁ is connected to ground. The current that flows through resistor R₁ is designated as I₂.

The emitter of bipolar junction transistor Q₂ is connected to the voltage output terminal V_(OUT). The emitter of bipolar junction transistor Q₂ is also connected through resistor R₃ to ground. The current that flows through resistor R₃ is designated as I₃.

The emitter of bipolar junction transistor Q₄ is connected to the collector of bipolar junction transistor Q₅. The base of bipolar junction transistor Q₅ is connected to a node between the emitter of bipolar junction transistor Q₄ and the collector of bipolar junction transistor Q₅. The emitter of bipolar junction transistor Q₅ is connected to the voltage output terminal V_(OUT).

The output voltage V_(OUT) is the sum of the voltage across resistor R₂ and the difference between the base-emitter voltage V_(BE) of transistor Q₁ and transistor Q₂. The current through transistor Q₁ is equal to I₁ and the current through transistor Q₂ is also equal to I₁.

The area of transistor Q₁ is equal to a unit value of area. That is, the transistor Q₁ has a value of area equal to one square unit (designated “1x” in FIG. 1). The area of transistor Q₂ is equal to “A” times the area of transistor Q₁. That is, transistor Q₂ has a value of area equal to A square units of area (designated “Ax” in FIG. 1).

With equal currents (I₁) through transistor Q₁ and through transistor Q₂ and with an area ratio of “one” to “A” (1:A), the difference voltage (ΔV_(BE)) is given by the expression: ΔV _(BE) =V _(T) ln(A)  (Eq. 1)

where the term V_(T) represents the thermal voltage of the transistor at the absolute temperature T.

The current I₂ flows through resistor R₁. Ignoring the base currents in transistor Q₁ and in transistor Q₂, the value of current flowing through transistor R₂ is also I₂. Transistor Q₃ supplies the I₂ current and the value of the current I₂ is given by the expression:

$\begin{matrix} {I_{2} = \frac{V_{{BEQ}_{1}}}{R_{1}}} & \left( {{Eq}.\mspace{14mu} 2} \right) \end{matrix}$

where the term V_(BEQ) ₁ represents the base-emitter voltage of transistor Q₁. This means that the voltage V_(R) ₂ across resistor R₂ is given by the expression:

$\begin{matrix} {V_{R_{2}} = {\frac{R_{2}}{R_{1}}V_{{BEQ}_{1}}}} & \left( {{Eq}.\mspace{14mu} 3} \right) \end{matrix}$

Adding the PTAT (Proportional to Absolute Temperature) difference voltage (ΔV_(BE)) to the voltage V_(R) ₂ across resistor R₂ provides a first order temperature independent output voltage V_(OUT). V _(OUT) =ΔV _(BE) +V _(R) ₂   (Eq. 4)

$\begin{matrix} {V_{OUT} = {{V_{T}{\ln(A)}} + {\left( \frac{R_{2}}{R_{1}} \right)V_{{BEQ}_{1}}}}} & {\left( {{Eq}.\mspace{14mu} 5} \right)\;} \end{matrix}$

Transistor Q₃ supplies the current I₂ and controls the bases of transistor Q₁ and transistor Q₂ to keep the collector of transistor Q₂ at a voltage value of 2V_(BE)+V_(OUT). Transistor Q₄ and transistor Q₅ control the output voltage V_(OUT) to keep the collector of transistor Q₁ at a voltage value of 2V_(BE)+V_(OUT). Transistor Q₅ is only used to balance the collector voltages of transistor Q₁ and transistor Q₂.

The current I₃ flows through resistor R₃. The value of resistance of resistor R₃ should be selected to provide a current value of approximately I₁ through transistor Q₄ and transistor Q₅. The absolute value of the current I₃ is not critical.

The value of the resistance of resistor R₃ is approximately equal to the output voltage V_(OUT) divided by the sum of the current I₁ plus the current through transistor Q₄. Because the value of the current through transistor Q₄ is approximately equal to the current I₁, the approximate value of the resistance of resistor R₃ is given by the expression:

$\begin{matrix} {R_{3} \cong \frac{V_{OUT}}{\left( {I_{1} + I_{Q4}} \right)} \cong \frac{V_{OUT}}{2I_{1}}} & {\left( {{Eq}.\mspace{14mu} 6} \right)\;} \end{matrix}$

The minimum value of the input voltage V_(IN) for bandgap reference circuit 100 is given by the expression: V _(IN)(minimum)=2V _(BE) +V _(SAT) +V _(OUT)  (Eq. 7)

The term V_(BE) represents a value of base to emitter voltage of said first bipolar junction transistor Q₁. The term V_(SAT) represents a minimum voltage required for the current sources (110, 120). The term V_(OUT) represents the output voltage. The currents I₁ in the current sources (110, 120) may be constant or they may be proportional to absolute temperature (PTAT). Typical values of V_(IN) (minimum) are in the range of one and eight tenths volt (1.8 V) to two volts (2.0 V).

The low voltage bandgap reference circuit 100 of the present invention provides a low value of output voltage V_(OUT) that is constant with temperature over a pre-selected range of temperature values. The value of output voltage V_(OUT) can be significantly less than one and two tenths volt (1.2 V). The value of output voltage V_(OUT) can be as low as approximately one hundred millivolts (100 mV). The lowest value of output voltage V_(OUT) achievable by prior art devices is approximately two hundred millivolts (200 mV).

The value of output voltage V_(OUT) that is provided by the low voltage bandgap reference circuit 100 of the present invention depends on the ratio of the value of the resistance of the R₁ resistor to the value of the resistance of the R₂ resistor (R₁/R₂). The value of the resistance of the R₃ resistor is not critical. No special start-up circuitry is required to operate the low voltage bandgap reference circuit 100 of the present invention. Start-up is initiated simply by supplying the I₁ currents.

The optimal values of the resistances of the resistors (R₁, R₂ and R₃) may be selected using the analysis set forth below. The basic equation for the base-emitter voltage V_(BE) for the bipolar junction transistor Q₁ is:

$\begin{matrix} {V_{{BEQ}_{1}} = {E_{GE} - {H\left( {E_{GE} - V_{{BE}_{o}}} \right)} + {V_{To}H\;{\ln\left( \frac{I_{1}}{I_{0}} \right)}} - {\eta\; V_{To}H\;{\ln(H)}}}} & {\left( {{Eq}.\mspace{14mu} 8} \right)\;} \end{matrix}$

The expression E_(GE) represents the silicon bandgap voltage. A typical value for the silicon bandgap voltage is approximately one and two tenths volt (1.2 V). The letter H represents the ratio of the absolute temperature T to the room temperature T₀.

$\begin{matrix} {H = \frac{T}{To}} & \left( {{Eq}.\mspace{14mu} 9} \right) \end{matrix}$

The room temperature T₀ is equal to twenty seven degrees Celsius (27° C.) and equal to three hundred degrees Kelvin (300° K.). The expression I₁ represents the current through transistor Q₁ at the temperature T. The expression I₀ represents the current through transistor Q₁ at room temperature T₀.

The expression V_(BE) ₀ represents the value of base-emitter voltage V_(BE) of transistor Q₁ when the temperature is room temperature T₀ (and the current through transistor Q₁ is I₀). The expression V_(T) ₀ represents the thermal voltage at room temperature T₀.

$\begin{matrix} {V_{T_{0}} = {\frac{{kT}_{0}}{q} \cong {26\mspace{14mu}{millivolts}}}} & \left( {{Eq}.\mspace{14mu} 10} \right) \end{matrix}$

The letter k represents Boltzmann's constant and the letter q represents the electron charge. The Greek letter η in Equation 8 represents the exponent of T in the saturation current of transistor Q₁. The expression η is referred to as XTI in the SPICE™ circuit simulation program and has a value of approximately four (4) for diffused silicon junctions.

We use the expression for V_(BE Q) ₁ of Equation 8 in Equation 5 (reproduced below):

$\begin{matrix} {V_{OUT} = {{V_{T}\mspace{14mu}{\ln(A)}} + {\left( \frac{R_{2}}{R_{1}} \right)V_{{BEQ}_{1}}}}} & \left( {{Eq}.\mspace{14mu} 5} \right) \end{matrix}$

For convenience, ratio R₂/R₁ will be represented by the Greek letter α. The letter H also represents the ratio of the thermal voltage V_(T) at the absolute temperature T to the thermal voltage V_(T) ₀ at room temperature T₀.

$\begin{matrix} {H = \frac{V_{T}}{V_{T_{0}}}} & \left( {{Eq}.\mspace{14mu} 11} \right) \end{matrix}$ Using these expressions, Equation 5 becomes: V _(OUT) =V _(T) ₀ H ln(A)+αV _(BE Q) ₁   (Eq. 12)

The goal is to find a value for the ratio α and a value for the area A such that the partial derivative of V_(OUT) with respect to H is zero.

$\begin{matrix} {\frac{\partial V_{OUT}}{\partial H} = 0} & \left( {{Eq}.\mspace{14mu} 13} \right) \end{matrix}$

For a current I₁ that is proportional to absolute temperature (PTAT), the letter H also represents the ratio of the current I₁ at the absolute temperature T to the current I₀ at room temperature T₀.

$\begin{matrix} {H = \frac{I_{1}}{I_{0}}} & \left( {{Eq}.\mspace{14mu} 14} \right) \end{matrix}$

Using Equation 8 and Equation 14 one may express Equation 12 as follows: V _(OUT)=α└E_(GE) −H(E _(GE) −V _(BE) ₀ )+V _(T) ₀ H ln(H)−ηV _(T) H ln(H)┘+V _(T) ₀ H ln  (Eq. 15)

Taking the derivative with respect to H gives:

$\begin{matrix} {\frac{\partial V_{OUT}}{\partial H} = {{\alpha\left\lbrack {{- \left( {E_{GE} - V_{{BE}_{0}}} \right)} + {{V_{T_{0}}\left( {1 + {\ln(H)}} \right)}\left( {{- \eta} + 1} \right)}} \right\rbrack}V_{T_{0}}{\ln(A)}}} & \left( {{Eq}.\mspace{14mu} 16} \right) \end{matrix}$

Setting the derivative in Equation 16 equal to zero and evaluating at H=1 gives: α└−(E _(GE) −V _(BE) ₀ )−V _(T) ₀ (η−1)┘+V _(T) ₀ ln(A)=0  (Eq. 17)

This gives an expression for α as follows:

$\begin{matrix} {\alpha = \frac{V_{T_{0}}{\ln(A)}}{\left( {E_{GE} - V_{{BE}_{0}}} \right) + {V_{T_{0}}\left( {\eta - 1} \right)}}} & \left( {{Eq}.\mspace{14mu} 18} \right) \end{matrix}$

This result for α is placed into Equation 12 in order to find the value of V_(OUT) where H equals one. The value of V_(OUT) when the value of H equals one will be referred to as the “magic” voltage. When the value of H equals one, then Equation 12 reduces to: V _(OUT) =V _(magic) =V _(T) ₀ ln(A)+αV _(BE) ₀   (Eq. 19)

Substituting the value of α from Equation 18 gives:

$\begin{matrix} {V_{magic} = {{V_{T_{0}}{\ln(A)}} + \frac{V_{{BE}_{0}}V_{T_{0}}{\ln(A)}}{\left( {E_{GE} - V_{{BE}_{0}}} \right) + {V_{T_{0}}\left( {\eta - 1} \right)}}}} & \left( {{Eq}.\mspace{14mu} 20} \right) \end{matrix}$

Factoring out the expression V_(T) ₀ ln(A) and rewriting the result gives:

$\begin{matrix} {V_{magic} = {V_{T_{0}}{\ln(A)}\left( \frac{E_{GE} + {V_{T_{0}}\left( {\eta - 1} \right)}}{\left( {E_{GE} - V_{{BE}_{0}}} \right) + {V_{T_{0}}\left( {\eta - 1} \right)}} \right)}} & \left( {{Eq}.\mspace{14mu} 21} \right) \end{matrix}$

For a constant value of current I₁ the expression (η−1) may be replaced with the expression η. For resistor R₁ and resistor R₂ where the thermal conductivity (TC) is non-zero, the expression (η−1) may be replaced by the expression (η−1+σ) where the Greek letter σ is equal to the thermal conductivity (expressed as a reciprocal of degrees Celsius) times the room temperature T₀ (expressed in degrees Celsius). σ=(TC)(T ₀)  (Eq. 22)

The selection of the design parameters using the analysis set forth above proceeds as follows. First, the value of resistance of resistor R₁ is set to be approximately equal to the base-emitter voltage V_(BE Q1) of transistor Q₁ divided by the current I₁.

$\begin{matrix} {R_{1} \cong \frac{V_{{BE}\;{Q1}}}{I_{1}}} & \left( {{Eq}.\mspace{14mu} 23} \right) \end{matrix}$

Then Equation 21 is used to find the area A from the desired value of output voltage V_(OUT). Alternatively, Equation 21 can be used to find the value of output voltage V_(OUT) from the desired value of area A.

Then Equation 18 is used to find the value of α. Then the value of resistance of resistor R₂ is determined from: R₂=αR₁  (Eq. 24)

Then the value of resistance of resistor R₃ is determined from Equation 6:

$\begin{matrix} {R_{3} \cong \frac{V_{OUT}}{2\; I_{1}}} & \left( {{Eq}.\mspace{14mu} 25} \right) \end{matrix}$

To illustrate the process of finding the design parameters as set forth above consider the following numerical example. Assume that the following values have been determined:

E_(GE)=1.17 volt

V_(BE) ₀ =0.65 volt

I₁=10.0 microamperes (μA)

A=10.0 square units of area

ρ=2

V_(T) ₀ =26 millivolts

The value of resistance of resistor R₁ is determined by Equation 23 as follows:

$\begin{matrix} {R_{1} = {\frac{0.65\mspace{14mu}{volt}}{10\mspace{14mu}\mu\mspace{14mu}{amps}} = {65k\;\Omega}}} & \left( {{Eq}.\mspace{14mu} 26} \right) \end{matrix}$

Then the given values are used in Equation 21 to determine the V_(magic) value for the output voltage V_(OUT). V_(magic)=V_(OUT)=0.131 volt  (Eq. 27)

Equation 18 gives the following value for α: α=0.1099  (Eq. 28)

Then Equation 24 gives: R ₂ =αR ₁=(0.1099)(65 kΩ)=7.14 kΩ  (Eq. 29)

Then Equation 25 gives:

$\begin{matrix} {{R_{3}\frac{V_{OUT}}{2\; I_{1}}} = {\frac{\left( {0.131\mspace{14mu}{volt}} \right)}{2\left( {10.0\mspace{14mu}\mu\mspace{14mu}{amps}} \right)} = {6.55k\;\Omega}}} & \left( {{Eq}.\mspace{14mu} 30} \right) \end{matrix}$

Table One below illustrates the variation of the value of output voltage V_(magic) as a function of the area A of transistor Q₂.

TABLE ONE Area A in 3.0 4.0 5.0 10.0 20.0 square units V_(magic) in 62.5 78.9 91.6 131.0 171.0 millivolts The residual curvature in the output voltage V_(OUT) is given by the equation: V _(CURVE) =V _(OUT) −V _(magic)  (Eq. 31)

Equation 31 can also be expressed as: V _(CURVE) =V _(T) ₀ α(η−1)[(H−1)−H ln(H)]  (Eq. 32)

This expression for V_(CURVE) is similar to that for a prior art bandgap reference circuit except that the value of V_(CURVE) is reduced by the factor of α. The percent of curvature to output voltage V_(magic) is the same as the prior art.

Increasing the value of V_(OUT) by increasing the ratio α will cause a negative temperature coefficient and vice versa. This result is opposite to that obtained from a prior art bandgap reference circuit. In a prior art bandgap reference circuit, the PTAT (Proportional to Absolute Temperature) voltage is scaled. In the bandgap reference circuit of the present invention, the base-emitter voltage (V_(BE)) is scaled. If one adds more PTAT voltage to the value of V_(OUT) (by increasing the ratio α) then one obtains a higher value of V_(OUT) and a positive temperature coefficient. If one adds more base-emitter voltage (V_(BE)) to the value of V_(OUT), then one obtains a higher value of V_(OUT) and a negative temperature coefficient.

FIG. 2 illustrates a schematic representation of a second embodiment of a low voltage bandgap reference circuit 200 constructed in accordance with the principles of the present invention. The input voltage V_(IN) is connected to a first current source 210 that produces a current having a value of I₁ and to a second current source 220 that also produces a current having a value of I₁ and to a third current source 230 that produces a current having a value of I₂. The input voltage V_(IN) is also connected to the collector of bipolar junction transistor Q₃ and to the collector of bipolar junction transistor Q₄.

The output of first current source 210 is connected to the collector of bipolar junction transistor Q₁. The output of first current source 210 is also connected to the base of bipolar junction transistor Q₄. The emitter of bipolar junction transistor Q₄ is connected to the output voltage terminal V_(OUT).

The output of second current source 220 is connected to the collector of bipolar junction transistor Q₂. The output of second current source 220 is also connected to the base of bipolar junction transistor Q₃. The emitter of bipolar junction transistor Q₃ is connected to a fourth current source 240 that produces a current having a value of I₃. The output of fourth current source 240 is connected to ground.

The base of bipolar junction transistor Q₂ is connected through resistor R₂ to the base of bipolar junction transistor Q₁. The output of third current source 230 is connected to the base of bipolar junction transistor Q₂.

The emitter of bipolar junction transistor Q₁ is connected to ground. A first end of resistor R₁ is connected to the base of bipolar junction transistor Q₁ and a second end of resistor R₁ is connected to ground.

The emitter of bipolar junction transistor Q₂ is connected to the voltage output terminal V_(OUT). The emitter of bipolar junction transistor Q₂ is also connected through resistor R₃ to ground.

The emitter of bipolar junction transistor Q₅ is connected to the base of bipolar junction transistor Q₂. The collector of bipolar junction transistor Q₅ is connected to ground. The base of bipolar junction transistor Q₅ is connected to a node between the emitter of bipolar junction transistor Q₃ and the fourth current source 240.

The area of transistor Q₁ is equal to a unit value of area. That is, the transistor Q₁ has a value of area equal to one square unit (designated “1x” in FIG. 2). The area of transistor Q₂ is equal to “A” times the area of transistor Q₁. That is, transistor Q₂ has a value of area equal to A square units of area (designated “Ax” in FIG. 2).

The second embodiment of the invention in the low power bandgap reference circuit 200 replaces the “diode” equivalent around the transistor Q₂ of bandgap reference circuit 100 with a “folded buffer” arrangement that comprises transistor Q₃ and transistor Q₅. This puts a value of voltage that is equal to (V_(BE)+V_(OUT)) on the collector of transistor Q₁ and on the collector of transistor Q₂.

Therefore, the minimum input voltage V_(IN) in bandgap reference circuit 200 is less than the minimum input voltage V_(IN) in bandgap reference circuit 100. V _(IN)(min)=V _(BE) +V _(SAT) +V _(OUT)  (Eq. 33)

The term V_(BE) represents a value of base to emitter voltage of said first bipolar junction transistor Q₁. The term V_(SAT) represents a minimum voltage required for the four current sources (210, 220, 230, 240). The term V_(OUT) represents the output voltage.

Equation 7 gives the minimum input voltage V_(IN) for the bandgap reference circuit 100. V _(IN)(min)=2V _(BE) +V _(SAT) +V _(OUT)  (Eq. 7)

In Equation 33 the output voltage V_(OUT) can be as low as approximately one hundred millivolts (100 mV). A low value of V_(OUT) in Equation 33 provides headroom for the fourth current source 240 that provides the 13 current.

The third current source 230 provides the I₂ current for resistor R₁ and transistor Q₅. In one advantageous embodiment the value of the I₂ current is given by:

$\begin{matrix} {I_{2} = {\frac{V_{{BE}\;{Q1}\;{MAX}}}{R_{1\;{MIN}}} + I_{1}}} & \left( {{Eq}.\mspace{14mu} 34} \right) \end{matrix}$

This value of current for I₂ provides transistor Q₅ with a current that has a value of current that is equal to I₁. It is noted that compensation capacitors may be required in low voltage bandgap reference circuit 200.

The low voltage bandgap reference circuits of the present invention (100 and 200) have several advantages over prior art bandgap reference circuits. First, no start-up circuitry is required. Second, the error amplification function is carried out by NPN bipolar junction transistors. Third, the bandgap reference circuits of the present invention require fewer transistors than prior art circuits. Fourth, the bandgap reference circuits of the present invention require fewer resistors than prior art circuits.

The foregoing description has outlined in detail the features and technical advantages of the present invention so that persons who are skilled in the art may understand the advantages of the invention. Persons who are skilled in the art should appreciate that they may readily use the conception and the specific embodiment of the invention that is disclosed as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. Persons who are skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the invention in its broadest form.

Although the present invention has been described with an exemplary embodiment, various changes and modifications may be suggested to one skilled in the art. It is intended that the present invention encompass such changes and modifications as fall within the scope of the appended claims. 

1. A bandgap reference circuit, comprising: a first current source having an input coupled to an input voltage; a second current source having an input coupled to the input voltage; a first bipolar junction transistor having a collector coupled to an output of the first current source; a second bipolar junction transistor having a collector coupled to an output of the second current source and having an emitter coupled to an output voltage terminal; a third bipolar junction transistor having a collector coupled to the input voltage and a base coupled to the output of the first current source; a fourth bipolar junction transistor having a collector and a base coupled to an emitter of the third bipolar junction transistor and having an emitter coupled to the output voltage terminal; and a voltage divider circuit coupled between a base of the first bipolar junction transistor and a base of the second bipolar junction transistor.
 2. The bandgap reference circuit of claim 1, wherein: the first bipolar junction transistor has a first area; and the second bipolar junction transistor has a larger second area.
 3. The bandgap reference circuit of claim 1, wherein the voltage divider circuit comprises: a first resistor coupled between the base of the first bipolar junction transistor and ground; and a second resistor coupled between the base of the first bipolar junction transistor and the base of the second bipolar junction transistor.
 4. The bandgap reference circuit of claim 3, wherein: an emitter of the first bipolar junction transistor is coupled to ground; and the emitter of the second bipolar junction transistor is coupled to ground through a third resistor.
 5. The bandgap reference circuit of claim 1, further comprising: a fifth bipolar junction transistor having a collector coupled to the input voltage, an emitter coupled to the base of the second bipolar junction transistor, and a base coupled to the collector of the second bipolar transistor.
 6. The bandgap reference circuit of claim 1, wherein a minimum value of the input voltage is given by an expression: V _(IN)(minimum)=2V _(BE) +V _(SAT) +V _(OUT) where V_(BE) represents a base-to-emitter voltage of the first bipolar junction transistor, V_(SAT) represents a minimum voltage required to operate the first current source and the second current source, and V_(OUT) represents an output voltage of the bandgap reference circuit.
 7. The bandgap reference circuit of claim 6, wherein the minimum value of the input voltage is in a range of approximately 1.8 volt to 2 volts.
 8. The bandgap reference circuit of claim 6, wherein a minimum value of the output voltage is approximately one hundred millivolts.
 9. The bandgap reference circuit of claim 5, wherein the bandgap reference circuit is started by supplying current from the first current source and by supplying current from the second current source.
 10. A bandgap reference circuit, comprising: a first current source having an input coupled to an input voltage; a second current source having an input coupled to the input voltage; a first bipolar junction transistor having a collector coupled to an output of the first current source; a second bipolar junction transistor having a collector coupled to an output of the second current source and having an emitter coupled to an output voltage terminal; a third current source having an input coupled to the input voltage and having an output coupled to a base of the second bipolar junction transistor; and a voltage divider circuit coupled between a base of the first bipolar junction transistor and the base of the second bipolar junction transistor.
 11. The bandgap reference circuit of claim 10, wherein: the first bipolar junction transistor has a first area; and the second bipolar junction transistor has a larger second area.
 12. The bandgap reference circuit of claim 10, wherein the voltage divider circuit comprises: a first resistor coupled between the base of the first bipolar junction transistor and ground; and a second resistor coupled between the base of the first bipolar junction transistor and the base of the second bipolar junction transistor.
 13. The bandgap reference circuit of claim 12, wherein: an emitter of the first bipolar junction transistor is coupled to ground; and the emitter of the second bipolar junction transistor is coupled to ground through a third resistor.
 14. The bandgap reference circuit of claim 10, further comprising: a fourth current source having an output coupled to ground; a third bipolar junction transistor having a collector coupled to the input voltage, an emitter coupled to an input of the fourth current source, and a base coupled to the collector of the second bipolar transistor; a fourth bipolar junction transistor having a collector coupled to the input voltage, an emitter coupled to the output voltage terminal, and a base coupled to the output of the first current source; and a fifth bipolar junction transistor having an emitter coupled to the base of the second bipolar junction transistor, a base coupled to an input of the fourth current source, and a collector coupled to ground.
 15. The bandgap reference circuit of claim 14, wherein a minimum value of the input voltage is given by an expression: V _(IN)(minimum)=V _(BE) +V _(SAT) +V _(OUT) where V_(BE) represents a base-to-emitter voltage of the first bipolar junction transistor, V_(SAT) represents a minimum voltage required to operate the current sources, and V_(OUT) represents an output voltage of the bandgap reference circuit.
 16. The bandgap reference circuit of claim 15, wherein the minimum value of the input voltage is in a range of approximately 0.9 volts to 1 volt.
 17. The bandgap reference circuit of claim 15, wherein a minimum value of the output voltage is approximately one hundred millivolts.
 18. The bandgap reference circuit of claim 14, wherein the bandgap reference circuit is started by supplying currents from the current sources.
 19. A bandgap reference circuit, comprising: a first current source having an input coupled to an input voltage; a second current source having an input coupled to the input voltage; a first bipolar junction transistor having a collector coupled to an output of the first current source and having a first area; a second bipolar junction transistor having a collector coupled to an output of the second current source, an emitter coupled to an output voltage terminal, and a second area larger than the first area; a third current source having an input coupled to the input voltage and having an output coupled to a base of the second bipolar junction transistor; a first resistor coupled between a base of the first bipolar junction transistor and ground; and a second resistor coupled between the base of the first bipolar junction transistor and a base of the second bipolar junction transistor; wherein an output voltage of the bandgap reference circuit is based on a ratio of resistances of the first and second resistors.
 20. The bandgap reference circuit of claim 19, wherein a minimum value of the output voltage is approximately one hundred millivolts. 